MUN2212T1
RoHS
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Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description
Cut Tape (CT) Surface Mount NPN - Pre-Biased Single Pre-Biased Bipolar Transistor (BJT) 60 @ 5mA 10V 100mA 338mW 50V
PDF
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Buying Options
Total Price: USD $8.91
Unit Price: USD $8.90815
≥1 USD $8.90815
≥10 USD $7.3093
≥100 USD $7.0813
≥500 USD $6.85235
≥1000 USD $6.62435
Inventory: 1182
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Technical
Packaging Cut Tape (CT)
Published 2007
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn80Pb20)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 338mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MUN2212
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 230mW
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage 50V
hFE Min 60
Resistor - Base (R1) 22 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 22 k Ω
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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