Avalanche Energy Rating (Eas) 3000 mJ
Pulsed Drain Current-Max (IDM) 185A
Drain to Source Breakdown Voltage 500V
Drain-source On Resistance-Max 0.077Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 74A
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V
Current - Continuous Drain (Id) @ 25°C 74A Tc
Input Capacitance (Ciss) (Max) @ Vds 9900pF @ 25V
Vgs(th) (Max) @ Id 5V @ 4mA
Rds On (Max) @ Id, Vgs 77m Ω @ 500mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1400W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish TIN SILVER COPPER
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series HiPerFET?, PolarHV?
Operating Temperature -55°C~150°C TJ