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IXFK74N50P2

IXYS
RoHS
RoHS RoHS compliant
Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 74A TO264
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant

Technical

Avalanche Energy Rating (Eas) 3000 mJ
Pulsed Drain Current-Max (IDM) 185A
Drain to Source Breakdown Voltage 500V
Drain-source On Resistance-Max 0.077Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 74A
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V
Current - Continuous Drain (Id) @ 25°C 74A Tc
Input Capacitance (Ciss) (Max) @ Vds 9900pF @ 25V
Vgs(th) (Max) @ Id 5V @ 4mA
Rds On (Max) @ Id, Vgs 77m Ω @ 500mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 1.4kW
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1400W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish TIN SILVER COPPER
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Series HiPerFET?, PolarHV?
Published 2011
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Package / Case TO-264-3, TO-264AA
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 26 Weeks

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