Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -80V
Max Breakdown Voltage 80V
Collector Emitter Saturation Voltage -1V
Transition Frequency 40MHz
Collector Emitter Breakdown Voltage 80V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Current - Collector Cutoff (Max) 10μA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A 1V
Collector Emitter Voltage (VCEO) 80V
Gain Bandwidth Product 40MHz
Transistor Application SWITCHING
Element Configuration Single
Base Part Number MJD45H11
Max Power Dissipation 1.75W
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ