STW32NM50N
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-Ch 500V 0.13 Ohm 22A MDmesh II FET
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Buying Options
Total Price: USD $0.85
Unit Price: USD $0.85246
≥1 USD $0.85246
≥10 USD $0.804204
≥100 USD $0.75868
≥500 USD $0.715746
≥1000 USD $0.675226
Inventory: 1269
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 340 mJ
Pulsed Drain Current-Max (IDM) 88A
Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 22A
Turn-Off Delay Time 110 ns
Fall Time (Typ) 23.6 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 9.5ns
Gate Charge (Qg) (Max) @ Vgs 62.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Input Capacitance (Ciss) (Max) @ Vds 1973pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 130m Ω @ 11A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Power Dissipation 190W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 190W Tc
Number of Elements 1
JESD-30 Code R-PSFM-T3
Base Part Number STW32N
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series MDmesh? II
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 16 Weeks
Alternative Model
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