MJD200T4G
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TRANS NPN 25V 5A DPAK
PDF
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Buying Options
Total Price: USD $0.55
Unit Price: USD $0.5456
≥1 USD $0.5456
≥10 USD $0.46464
≥100 USD $0.322872
≥500 USD $0.25205
≥1000 USD $0.204873
Inventory: 3850
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Physical
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 25V
Max Power Dissipation 12.5W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 5A
Frequency 65MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MJD200
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 1.4W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 65MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 45 @ 2A 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1A, 5A
Collector Emitter Breakdown Voltage 25V
Transition Frequency 65MHz
Collector Emitter Saturation Voltage 1.8V
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 8V
hFE Min 70
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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