Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 11A
Turn-Off Delay Time 10 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 11A Ta
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 15V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Rds On (Max) @ Id, Vgs 13.8m Ω @ 11A, 10V
Transistor Application SWITCHING
Turn On Delay Time 6.9 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.5W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ