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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Tape & Box (TB) Through Hole NPN - Darlington Single Bipolar (BJT) Transistor 10000 @ 100mA 5V 500mA 625mW 60V
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Buying Options
Total Price: USD $0.02
Unit Price: USD $0.018786
≥1 USD $0.018786
≥200 USD $0.00727
≥500 USD $0.007015
≥1000 USD $0.006888
Inventory: 1163
Minimum: 1
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Supplier Device Package TO-92-3

Technical

Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 60V
Max Power Dissipation 625mW
Current Rating 500mA
Number of Elements 1
Polarity NPN
Element Configuration Single
Power - Max 625mW
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage 60V
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 500mA
Collector Emitter Saturation Voltage 1.5V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 10V
hFE Min 10000

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

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