MIXA101W1200EH
RoHS 
RoHS compliant
RoHS compliantPackage E3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 1200V 155A 500W E3
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
IGBT Type PT
Turn Off Time-Nom (toff) 350 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A
Turn On Time 110 ns
Collector Emitter Saturation Voltage 1.8V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 300μA
Max Collector Current 155A
Collector Emitter Voltage (VCEO) 2.1V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection ISOLATED
Power Dissipation 500W
Configuration Three Phase Inverter
Number of Elements 6
JESD-30 Code R-XUFM-X19
Pin Count 19
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 500W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Number of Terminations 19
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2011
Packaging Bulk
Operating Temperature -40°C~125°C TJ
Physical
Transistor Element Material SILICON
Package / Case E3
Mounting Type Chassis Mount
Mount Chassis Mount
Alternative Model
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