KSA539CYTA
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT PNP Epitaxial Transistor
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Total Price: USD $0.03
Unit Price: USD $0.0264
≥1 USD $0.0264
Inventory: 1267
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
hFE Min 40
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -60V
Max Breakdown Voltage 45V
Collector Emitter Saturation Voltage -250mV
Collector Emitter Breakdown Voltage 45V
Vce Saturation (Max) @ Ib, Ic 500mV @ 15mA, 150mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA 1V
Max Collector Current 200mA
Collector Emitter Voltage (VCEO) 45V
Transistor Type PNP
Polarity/Channel Type PNP
Transistor Application AMPLIFIER
Power Dissipation 400mW
Element Configuration Single
Number of Elements 1
Base Part Number KSA539
Current Rating -200mA
Terminal Position BOTTOM
Max Power Dissipation 400mW
Voltage - Rated DC -45V
Subcategory Other Transistors
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2007
Packaging Tape & Box (TB)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Weight 240mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Factory Lead Time 8 Weeks
Alternative Model
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