Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -100V
Max Breakdown Voltage 100V
Collector Emitter Saturation Voltage -700mV
Transition Frequency 4MHz
Current - Collector (Ic) (Max) 2A
Collector Emitter Breakdown Voltage 150V
Vce Saturation (Max) @ Ib, Ic 700mV @ 200mA, 1A
Current - Collector Cutoff (Max) 300μA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A 4V
Collector Emitter Voltage (VCEO) 115V
Polarity/Channel Type PNP
Transistor Application SWITCHING
Element Configuration Single
Max Power Dissipation 30W
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ