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RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bipolar Transistors - BJT PNP Epitaxial Sil
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Buying Options
Total Price: USD $0.35
Unit Price: USD $0.34865
≥1 USD $0.34865
≥10 USD $0.2869
≥100 USD $0.2774
≥500 USD $0.26885
≥1000 USD $0.25935
Inventory: 1104
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Technical

hFE Min 15
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -100V
Max Breakdown Voltage 100V
Collector Emitter Saturation Voltage -700mV
Transition Frequency 4MHz
Current - Collector (Ic) (Max) 2A
Collector Emitter Breakdown Voltage 150V
Vce Saturation (Max) @ Ib, Ic 700mV @ 200mA, 1A
JEDEC-95 Code TO-220AB
Current - Collector Cutoff (Max) 300μA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A 4V
Max Collector Current 2A
Collector Emitter Voltage (VCEO) 115V
Transistor Type PNP
Polarity/Channel Type PNP
Transistor Application SWITCHING
Power Dissipation 30W
Element Configuration Single
Number of Elements 1
Base Part Number BD240
Current Rating -2A
Max Power Dissipation 30W
Voltage - Rated DC -100V
Subcategory Other Transistors
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2000
Packaging Tube
Operating Temperature 150°C TJ

Physical

Transistor Element Material SILICON
Weight 1.8g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Factory Lead Time 36 Weeks

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