DS Breakdown Voltage-Min 90V
Drain-source On Resistance-Max 0.0205Ohm
Drain Current-Max (Abs) (ID) 50A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 10A
Turn-Off Delay Time 36 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 90V
Gate Charge (Qg) (Max) @ Vgs 44nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 10A Ta 50A Tc
Input Capacitance (Ciss) (Max) @ Vds 4209pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 16.7m Ω @ 20A, 10V
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 4W Ta 100W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ