BD159G
RoHS 
RoHS compliant
RoHS compliantPackage TO-225AA, TO-126-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Trans GP BJT NPN 350V 0.5A 3-Pin TO-225 Bulk
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Technical
hFE Min 30
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 375V
Max Breakdown Voltage 350V
Transition Frequency 6MHz
Collector Emitter Breakdown Voltage 100V
Current - Collector Cutoff (Max) 100μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 10V
Max Collector Current 500mA
Collector Emitter Voltage (VCEO) 350V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Power Dissipation 20W
Element Configuration Single
Number of Elements 1
Pin Count 3
Base Part Number BD159
Time@Peak Reflow Temperature-Max (s) 40
Current Rating 500mA
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 20W
Voltage - Rated DC 350V
Subcategory Other Transistors
Additional Feature HIGH RELIABILITY
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2003
Packaging Bulk
Operating Temperature -65°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Surface Mount NO
Package / Case TO-225AA, TO-126-3
Mounting Type Through Hole
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Factory Lead Time 2 Weeks
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