FDPF4N60NZ
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET Dual 2A High-Speed Low-Side Gate Driver
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Buying Options
Total Price: USD $1.07
Unit Price: USD $1.07445
≥1 USD $1.07445
≥10 USD $0.8816
≥100 USD $0.85405
≥500 USD $0.8265
≥1000 USD $0.79895
Inventory: 916
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series UniFET-II?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 28W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 28W
Case Connection ISOLATED
Turn On Delay Time 12.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5 Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.8A Tc
Gate Charge (Qg) (Max) @ Vgs 10.8nC @ 10V
Rise Time 15.1ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 12.8 ns
Turn-Off Delay Time 30.2 ns
Continuous Drain Current (ID) 3.8A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 600V
Dimensions
Height 16.07mm
Length 10.36mm
Width 4.9mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
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