BD159
RoHS
/
Package TO-225AA, TO-126-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TRANS NPN 350V 0.5A TO-225
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Technical
hFE Min 30
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 375V
Collector Emitter Breakdown Voltage 350V
Current - Collector Cutoff (Max) 100μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 10V
Max Collector Current 500mA
Collector Emitter Voltage (VCEO) 350V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number BD159
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 500mA
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 240
Max Power Dissipation 20W
Voltage - Rated DC 350V
Subcategory Other Transistors
Additional Feature HIGH RELIABILITY
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Published 2003
Packaging Bulk
Operating Temperature -65°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-225AA, TO-126-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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