IRF6633TR1PBF
RoHS
/
Package DirectFET? Isometric MP
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 16A DIRECTFET
PDF
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Buying Options
Total Price: USD $6.91
Unit Price: USD $6.9103
≥1 USD $6.9103
≥10 USD $5.67055
≥100 USD $5.4929
≥500 USD $5.3162
≥1000 USD $5.13855
Inventory: 1115
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MP
Number of Pins 5
Supplier Device Package DIRECTFET? MP
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 5.6MOhm
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Current Rating 16A
Number of Elements 1
Power Dissipation-Max 2.3W Ta 89W Tc
Power Dissipation 89W
Turn On Delay Time 9.7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.6mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 10V
Current - Continuous Drain (Id) @ 25°C 16A Ta 59A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 31ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.3 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 13A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Input Capacitance 1.25nF
Drain to Source Resistance 9.4mOhm
Rds On Max 5.6 mΩ
Nominal Vgs 1.8 V
Dimensions
Height 676μm
Length 6.35mm
Width 5.05mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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