6585_2N4209
RoHS
/
Package Die
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TRANS PNP GENERAL PURPOSE
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case Die
Technical
Operating Temperature 200°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 300mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 1mA 5V
Current - Collector Cutoff (Max) 10nA
Vce Saturation (Max) @ Ib, Ic 800mV @ 100μA, 1mA
Voltage - Collector Emitter Breakdown (Max) 15V
Current - Collector (Ic) (Max) 50mA
Frequency - Transition 850MHz
Alternative Model
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