Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature UL RECOGNIZED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form UNSPECIFIED
Power Dissipation-Max 800W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 500mA, 20V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 62A Tc
Gate Charge (Qg) (Max) @ Vgs 550nC @ 20V
Drive Voltage (Max Rds On,Min Rds On) 20V
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 62A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Avalanche Energy Rating (Eas) 5000 mJ