2SC6082
RoHS
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Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 200 @ 330mA 2V 10muA ICBO 2W 195MHz
PDF
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Buying Options
Total Price: USD $0.6
Unit Price: USD $0.600441
≥1 USD $0.600441
≥10 USD $0.586051
≥100 USD $0.576894
≥500 USD $0.566429
≥1000 USD $0.5149
Inventory: 46
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
hFE Min 200
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 60V
Collector Emitter Saturation Voltage 200mV
Transition Frequency 195MHz
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 400mV @ 375mA, 7.5A
JEDEC-95 Code TO-220AB
Current - Collector Cutoff (Max) 10μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 330mA 2V
Max Collector Current 15A
Collector Emitter Voltage (VCEO) 50V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 195MHz
Transistor Application SWITCHING
Case Connection ISOLATED
Power Dissipation 2W
Element Configuration Single
Number of Elements 1
Pin Count 3
Frequency 195MHz
Max Power Dissipation 2W
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Published 2013
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
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