MWI225-17E9
RoHS 
RoHS compliant
RoHS compliantPackage E+
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 1700V 335A 1400W E+
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Input Capacitance (Cies) @ Vce 22nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type NPT
Turn Off Time-Nom (toff) 610 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 225A
Turn On Time 290 ns
Input Capacitance 22nF
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Breakdown Voltage 1.7kV
Current - Collector Cutoff (Max) 600μA
Max Collector Current 335A
Collector Emitter Voltage (VCEO) 2.9V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 1400W
Case Connection ISOLATED
Configuration Three Phase
Number of Elements 6
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X17
Pin Count 29
Base Part Number MWI
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 1.4kW
Subcategory Insulated Gate BIP Transistors
Additional Feature UL REGONIZED
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Number of Terminations 17
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2007
Packaging Bulk
Operating Temperature -40°C~125°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 29
Package / Case E+
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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