2N6517RLRP
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TRANS NPN 350V 0.5A TO-92
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Technical
Turn Off Time-Max (toff) 3500ns
hFE Min 20
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 350V
Collector Emitter Saturation Voltage 1V
Transition Frequency 40MHz
Collector Emitter Breakdown Voltage 350V
Vce Saturation (Max) @ Ib, Ic 1V @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 50mA 10V
Max Collector Current 500mA
Collector Emitter Voltage (VCEO) 1V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 200MHz
Transistor Application SWITCHING
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-PBCY-T3
Pin Count 3
Base Part Number 2N6517
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 500mA
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 240
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC 350V
Subcategory Other Transistors
HTS Code 8541.21.00.95
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Published 2004
Packaging Tape & Box (TB)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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