IRF730
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
POWER, N-CHANNEL, MOSFET
PDF
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Buying Options
Total Price: USD $1.75
Unit Price: USD $1.7512
≥1 USD $1.7512
≥10 USD $1.6632
≥100 USD $1.5752
≥500 USD $1.4872
≥1000 USD $1.452
Inventory: 630
Minimum: 1
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 74W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1 Ω @ 3.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.5A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 5.5A
Drain-source On Resistance-Max 1Ohm
Pulsed Drain Current-Max (IDM) 22A
DS Breakdown Voltage-Min 400V
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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