S8050-D-BP
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TO-226-3TO-92-3 (TO-226AA) Through Hole NPN SINGLE Bipolar (BJT) Transistor 160 @ 50mA 1V 500mA 625MW 150MHz
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Technical Details
Technical
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 625MW
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 50mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 600mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 25V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 150MHz
Frequency - Transition 150MHz
JESD-30 Code O-PBCY-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position BOTTOM
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Pbfree Code yes
JESD-609 Code e3
Operating Temperature -55°C~150°C TJ
Compliance
RoHS Status ROHS3 Compliant
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
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