Feedback Cap-Max (Crss) 5 pF
Max Junction Temperature (Tj) 150°C
Drain to Source Breakdown Voltage -60V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) -120mA
Turn-Off Delay Time 10 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 120mA Ta
Input Capacitance (Ciss) (Max) @ Vds 79pF @ 25V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Rds On (Max) @ Id, Vgs 10 Ω @ 500mA, 10V
Transistor Application SWITCHING
Turn On Delay Time 2.5 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 360mW Ta
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ