2N3563
RoHS
/
Package TO-106-3 Domed
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TRANSISTOR NPN TO-106
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Collector-Base Capacitance-Max 1.7pF
Power Dissipation-Max (Abs) 0.2W
Frequency - Transition 600MHz
Transition Frequency 600MHz
Voltage - Collector Emitter Breakdown (Max) 12V
Current - Collector Cutoff (Max) 50nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8mA 10V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Configuration SINGLE
Number of Elements 1
Operating Temperature (Max) 125°C
Qualification Status Not Qualified
JESD-30 Code O-MBCY-W4
Pin Count 3
Reach Compliance Code not_compliant
Terminal Form WIRE
Terminal Position BOTTOM
Subcategory Other Transistors
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Packaging Bulk
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-106-3 Domed
Mounting Type Through Hole
Alternative Model
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