BSC042N03MSGATMA1
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 30V 17A 8-Pin TDSON
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Buying Options
Total Price: USD $0.79
Unit Price: USD $0.792
≥1 USD $0.792
≥10 USD $0.64768
≥100 USD $0.503448
≥500 USD $0.426747
≥1000 USD $0.347626
≥3000 USD $0.327254
Inventory: 4361
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 39 Weeks
Physical
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series OptiMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 57W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.2m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 15V
Current - Continuous Drain (Id) @ 25°C 17A Ta 93A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 17A
Drain-source On Resistance-Max 0.0054Ohm
Pulsed Drain Current-Max (IDM) 372A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 40 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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