BDV64C-S
RoHS 
RoHS compliant
RoHS compliantPackage TO-218-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bourns BDV64C-S PNP Darlington Transistor, 12 A 120 V HFE:1000, 3-Pin SOT-93
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-218-3
Number of Pins 3
Supplier Device Package SOT-93
Technical
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 3.5W
Base Part Number BDV64
Number of Elements 1
Polarity PNP
Voltage 120V
Element Configuration Single
Current 12A
Power - Max 3.5W
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 12A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 4V
Current - Collector Cutoff (Max) 2mA
Vce Saturation (Max) @ Ib, Ic 2V @ 20mA, 5A
Collector Emitter Breakdown Voltage 120V
Voltage - Collector Emitter Breakdown (Max) 120V
Current - Collector (Ic) (Max) 12A
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
hFE Min 1000
Dimensions
Height 12.2mm
Length 15.2mm
Width 4.9mm
Compliance
RoHS Status ROHS3 Compliant
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