IRFH5302DTR2PBF
RoHS
/
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 29A 8VQFN
PDF
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Buying Options
Total Price: USD $6.86
Unit Price: USD $6.85995
≥1 USD $6.85995
≥10 USD $5.62875
≥100 USD $5.453
≥500 USD $5.2763
≥1000 USD $5.10055
Inventory: 1120
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 5mm
Length 5.9944mm
Height 838.2μm
Technical
Nominal Vgs 2.35 V
Rds On Max 2.5 mΩ
Drain to Source Resistance 2.5mOhm
Recovery Time 29 ns
Input Capacitance 3.635nF
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 2.35V
Continuous Drain Current (ID) 100A
Turn-Off Delay Time 20 ns
Fall Time (Typ) 12 ns
Drain to Source Voltage (Vdss) 30V
Rise Time 30ns
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Current - Continuous Drain (Id) @ 25°C 29A Ta 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 3635pF @ 25V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Rds On (Max) @ Id, Vgs 2.5mOhm @ 50A, 10V
FET Type N-Channel
Turn On Delay Time 16 ns
Power Dissipation 104W
Element Configuration Single
Number of Elements 1
Technology MOSFET (Metal Oxide)
Max Power Dissipation 3.6W
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2010
Packaging Cut Tape (CT)
Physical
Supplier Device Package PQFN (5x6) Single Die
Number of Pins 8
Package / Case 8-PowerVDFN
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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