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BD545C-S

Bourns Inc.
RoHS
RoHS RoHS compliant
Package TO-218-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Trans GP BJT NPN 100V 15A 3-Pin(3+Tab) SOT-93
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Technical Details

Compliance

RoHS Status ROHS3 Compliant

Technical

Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 100V
Collector Emitter Breakdown Voltage 100V
Vce Saturation (Max) @ Ib, Ic 1V @ 2A, 10A
Current - Collector Cutoff (Max) 700μA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 10A 4V
Max Collector Current 15A
Collector Emitter Voltage (VCEO) 100V
Transistor Type NPN - Darlington
Transistor Application SWITCHING
Power - Max 3.5W
Case Connection COLLECTOR
Power Dissipation 85W
Element Configuration Single
Polarity NPN
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number BD545
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 3.5W
Terminal Finish TIN SILVER COPPER
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e1
Published 1993
Packaging Tube
Operating Temperature -65°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-218-3
Mounting Type Through Hole
Mount Through Hole

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