Pulsed Drain Current-Max (IDM) 65A
Drain to Source Breakdown Voltage -12V
Drain-source On Resistance-Max 0.007Ohm
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 16A
Turn-Off Delay Time 271 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain to Source Voltage (Vdss) 12V
Gate Charge (Qg) (Max) @ Vgs 91nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 16A Ta
Input Capacitance (Ciss) (Max) @ Vds 8676pF @ 10V
Vgs(th) (Max) @ Id 900mV @ 250μA
Rds On (Max) @ Id, Vgs 7m Ω @ 16A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta
Technology MOSFET (Metal Oxide)
Additional Feature ULTRA LOW RESISTANCE
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ