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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description Bulk Through Hole NPN SINGLE RF Transistor 40 @ 20mA 10V 100mA 625mW 700MHz
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Bulk
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 625mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA 10V
Voltage - Collector Emitter Breakdown (Max) 20V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 700MHz
Frequency - Transition 700MHz
Highest Frequency Band VERY HIGH FREQUENCY B
Noise Figure (dB Typ @ f) 3dB @ 200MHz

Compliance

RoHS Status ROHS3 Compliant

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