RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
Bulk Through Hole NPN SINGLE RF Transistor 65 @ 1mA 10V 50mA 350mW 1.1GHz
PDF
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Buying Options
Total Price: USD $0.37
Unit Price: USD $0.37335
≥1 USD $0.37335
≥10 USD $0.30685
≥100 USD $0.29735
≥500 USD $0.28785
≥1000 USD $0.27835
≥500 USD $0.2489
Inventory: 990
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Frequency - Transition 1.1GHz
Current - Collector (Ic) (Max) 50mA
Voltage - Collector Emitter Breakdown (Max) 40V
DC Current Gain (hFE) (Min) @ Ic, Vce 65 @ 1mA 10V
Transistor Type NPN
Polarity/Channel Type NPN
Power - Max 350mW
Configuration SINGLE
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code O-PBCY-T3
Pin Count 3
Terminal Position BOTTOM
Terminal Finish MATTE TIN
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Packaging Bulk
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
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