MS2553C
RoHS
/
Package M220
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
Trans GP BJT 25V 4A 4-Pin Style M220
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Technical Details
Supply Chain
Factory Lead Time 22 Weeks
Physical
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case M220
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature 200°C TJ
Packaging Bulk
Published 2008
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation 175W
Terminal Position RADIAL
Terminal Form FLAT
Pin Count 2
JESD-30 Code O-CRFM-F2
Number of Elements 1
Configuration SINGLE
Case Connection BASE
Power - Max 175W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 500mA 5V
Collector Emitter Breakdown Voltage 25V
Gain 10.5dB
Frequency - Transition 1.025GHz~1.15GHz
Collector Base Voltage (VCBO) 65V
Highest Frequency Band L B
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
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