IRF7834PBF
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 19A 8-SOIC
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Buying Options
Total Price: USD $1.07
Unit Price: USD $1.07445
≥1 USD $1.07445
≥10 USD $0.8816
≥100 USD $0.85405
≥500 USD $0.8265
≥1000 USD $0.79895
Inventory: 1099
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 3.9878mm
Length 4.9784mm
Height 1.4986mm
Technical
Nominal Vgs 2.25 V
Avalanche Energy Rating (Eas) 25 mJ
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0045Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 19A
Turn-Off Delay Time 18 ns
Fall Time (Typ) 5 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 14.3 ns
Gate Charge (Qg) (Max) @ Vgs 44nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 19A Ta
Input Capacitance (Ciss) (Max) @ Vds 3710pF @ 15V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Rds On (Max) @ Id, Vgs 4.5m Ω @ 19A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 13.7 ns
Power Dissipation 2.5W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta
Number of Elements 1
Current Rating 19A
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 30V
Subcategory FET General Purpose Power
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Discontinued
Series HEXFET?
Published 2004
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 15 Weeks
Alternative Model
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