MS2206
RoHS
/
Package M115
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
RF TRANS NPN 20V 1.15GHZ M115
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Technical Details
Physical
Mount Chassis Mount, Surface Mount
Mounting Type Chassis Mount
Package / Case M115
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature 200°C TJ
Packaging Bulk
Published 2004
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish TIN LEAD
Subcategory Other Transistors
Max Power Dissipation 7.5W
Terminal Position RADIAL
Terminal Form FLAT
Pin Count 4
Configuration Single
Case Connection BASE
Power - Max 7.5W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 100mA 5V
Collector Emitter Breakdown Voltage 20V
Gain 10dB
Frequency - Transition 1.025GHz~1.15GHz
Collector Base Voltage (VCBO) 45V
Highest Frequency Band L B
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
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