STP6NB90
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 900V 5.8A TO-220
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 250 mJ
Pulsed Drain Current-Max (IDM) 23A
Drain to Source Breakdown Voltage 900V
Drain-source On Resistance-Max 2Ohm
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 5.8A
Fall Time (Typ) 15 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 10ns
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5.8A Tc
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 2 Ω @ 3A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 20 ns
Power Dissipation 135W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 135W Tc
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number STP6N
Current Rating 5.8A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 900V
Subcategory FET General Purpose Power
Additional Feature HIGH VOLTAGE
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Series PowerMESH?
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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