PH3134-55L
RoHS 
RoHS compliant
RoHS compliantPackage Metal
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
RF TRANS NPN 65V
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Highest Frequency Band S B
Gain 7.5dB
Collector Emitter Breakdown Voltage 65V
Max Collector Current 6.5A
Collector Emitter Voltage (VCEO) 65V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Power - Max 55W
Case Connection BASE
Configuration SINGLE WITH BUILT-IN RESISTOR
Number of Elements 1
Qualification Status Not Qualified
Pin Count 2
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form FLAT
Terminal Position DUAL
Max Power Dissipation 55W
Subcategory Other Transistors
Additional Feature WITH EMITTER BALLASTING RESISTORS
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Published 2009
Packaging Tray
Operating Temperature 200°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 2
Package / Case Metal
Mounting Type Chassis Mount
Mount Chassis Mount
Supply Chain
Factory Lead Time 28 Weeks
Alternative Model
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