BFG 196 E6327
RoHS
/
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
RF TRANS NPN 12V 7.5GHZ SOT223-4
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Noise Figure (dB Typ @ f) 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Collector-Base Capacitance-Max 1.4pF
Highest Frequency Band L B
Power Dissipation-Max (Abs) 0.8W
Frequency - Transition 7.5GHz
Transition Frequency 7500MHz
Current - Collector (Ic) (Max) 150mA
Voltage - Collector Emitter Breakdown (Max) 12V
Gain 9dB ~ 14.5dB
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA 8V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Power - Max 800mW
Case Connection COLLECTOR
Configuration SINGLE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) 235
Terminal Form GULL WING
Terminal Position DUAL
Subcategory Other Transistors
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Published 2007
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-261-4, TO-261AA
Mounting Type Surface Mount
Alternative Model
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