IRF7807VPBF
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 8.3A 8-SOIC
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series HEXFET?
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 8.3A
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Row Spacing 6.3 mm
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 6.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8.3A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 5V
Rise Time 1.2 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Vgs (Max) ±20V
Fall Time (Typ) 2.2 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 8.3A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.025Ohm
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Nominal Vgs 3 V
Dimensions
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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