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NE68133-A

CEL
RoHS
/
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description RF Bipolar Transistors NPN High Frequency
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Technical Details

Technical

Packaging Strip
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Base Part Number NE68133
Element Configuration Single
Output Power 200mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 10V
Operating Temperature 150°C TJ
Noise Figure (dB Typ @ f) 1.2dB @ 1GHz
Continuous Collector Current 65mA
Emitter Base Voltage (VEBO) 1.5V
Frequency - Transition 9GHz
Gain 13dB
Collector Emitter Breakdown Voltage 10V
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA 8V
Max Collector Current 65mA

Physical

Weight 200.998119mg
Number of Pins 3
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Mount Surface Mount

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant

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