C3M0075120D
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET 1200V, 75 MOHM, G3 SIC
PDF
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Buying Options
Total Price: USD $17.32
Unit Price: USD $17.3184
≥1 USD $17.3184
≥10 USD $14.02163
≥100 USD $13.19692
≥500 USD $11.959702
Inventory: 987
Minimum: 1
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Technical Details
Technical
Vgs (Max) +19V, -8V
Drive Voltage (Max Rds On,Min Rds On) 15V
Drain to Source Voltage (Vdss) 1200V
Gate Charge (Qg) (Max) @ Vgs 54nC @ 15V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 1000V
Vgs(th) (Max) @ Id 4V @ 5mA
Rds On (Max) @ Id, Vgs 90mOhm @ 20A, 15V
FET Type N-Channel
Power Dissipation-Max 113.6W Tc
Technology SiCFET (Silicon Carbide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series C3M?
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Supplier Device Package TO-247-3
Package / Case TO-247-3
Mounting Type Through Hole
Supply Chain
Factory Lead Time 8 Weeks
Alternative Model
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