IDT71V3556S100BQ8
RoHS
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Package /
Category Integrated Circuits (ICs) / Memory
Description
BALL 3-STATE 2007 Parallel (Memory Format) Memory 70C 3.3V 4718592bit 0.04A
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Technical Details
Physical
Surface Mount YES
Number of Pins 165
Technical
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e0
Moisture Sensitivity Level (MSL) 3
Number of Terminations 165
Terminal Finish Tin/Lead (Sn63Pb37)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Subcategory SRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Supply Voltage 3.3V
Terminal Pitch 1mm
Reach Compliance Code not_compliant
Frequency 100MHz
Qualification Status Not Qualified
Power Supplies 3.3V
Temperature Grade COMMERCIAL
Interface Parallel
Memory Type RAM, SRAM
Operating Mode SYNCHRONOUS
Supply Current-Max 0.25mA
Organization 128KX36
Output Characteristics 3-STATE
Memory Width 36
Standby Current-Max 0.04A
Memory Density 4718592 bit
Access Time (Max) 5 ns
I/O Type COMMON
Standby Voltage-Min 3.14V
Compliance
RoHS Status Non-RoHS Compliant
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