71V65803S100BQI
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Category Integrated Circuits (ICs) / Memory
Description
Synchronous Active BALL 3-STATE (Memory Format) Memory 85C 3.465V 9Mb 270mA
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Technical Details
Technical
Pin Count 165
Operating Supply Voltage 3.3V
Temperature Grade INDUSTRIAL
Interface Parallel
Max Supply Voltage 3.465V
Min Supply Voltage 3.135V
Number of Ports 1
Nominal Supply Current 270mA
Memory Type RAM, SRAM
Access Time 5 ns
Output Characteristics 3-STATE
Address Bus Width 19b
Density 9 Mb
Standby Current-Max 0.06A
I/O Type COMMON
Sync/Async Synchronous
Word Size 18b
Time@Peak Reflow Temperature-Max (s) 20
Frequency 100MHz
Supply Voltage 3.3V
Number of Functions 1
Peak Reflow Temperature (Cel) 225
Terminal Form BALL
Terminal Position BOTTOM
Technology CMOS
Subcategory SRAMs
Additional Feature PIPELINED ARCHITECTURE
Min Operating Temperature -40°C
Max Operating Temperature 85°C
Terminal Finish Tin/Lead (Sn63Pb37)
Number of Terminations 165
Moisture Sensitivity Level (MSL) 3
Part Status Active
Pbfree Code no
JESD-609 Code e0
Published 2005
Dimensions
Length 15mm
Width 13mm
Thickness 1.2mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead
Physical
Number of Pins 165
Mount Surface Mount
Supply Chain
Factory Lead Time 7 Weeks
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