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NUS5530MNR2G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-VDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - Special Purpose
Description Integrated Power MOSFET with PNP 8-Pin DFN EP T/R
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Buying Options
Total Price: USD $1.07
Unit Price: USD $1.07445
≥1 USD $1.07445
≥10 USD $0.8816
≥100 USD $0.85405
≥500 USD $0.8265
≥1000 USD $0.79895
Inventory: 1178
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No

Dimensions

Width 3.3mm
Length 3.3mm
Height 950μm

Technical

Fall Time-Max (tf) 70 ns
VCEsat-Max 0.3 V
Drain to Source Resistance 200Ohm
DC Current Gain-Min (hFE) 100
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -55V
FET Technology METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min 20V
Collector Emitter Saturation Voltage -100mV
Pulsed Drain Current-Max (IDM) 20A
Max Frequency 100MHz
Gate to Source Voltage (Vgs) -35V
Continuous Drain Current (ID) -3.9A
Max Collector Current 2A
Collector Emitter Voltage (VCEO) 35V
Transistor Type NPN, P-Channel
Halogen Free Halogen Free
Transistor Application SWITCHING
Power Dissipation 635mW
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Rise Time-Max 55 ns
Number of Elements 1
Pin Count 8
Base Part Number NUS5530MN
Time@Peak Reflow Temperature-Max (s) 40
Current Rating 3.9A
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 2.5W
Current Rating (Amps) 2A PNP 3.9A P-Channel
Subcategory Other Transistors
Voltage - Rated 35V PNP 20V P-Channel
Applications General Purpose
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2006
Packaging Tape & Reel (TR)

Physical

Number of Pins 8
Surface Mount YES
Package / Case 8-VDFN Exposed Pad
Mounting Type Surface Mount

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Factory Lead Time 2 Weeks

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