Drain to Source Resistance 200Ohm
DC Current Gain-Min (hFE) 100
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -55V
FET Technology METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min 20V
Collector Emitter Saturation Voltage -100mV
Pulsed Drain Current-Max (IDM) 20A
Gate to Source Voltage (Vgs) -35V
Continuous Drain Current (ID) -3.9A
Collector Emitter Voltage (VCEO) 35V
Transistor Type NPN, P-Channel
Halogen Free Halogen Free
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Base Part Number NUS5530MN
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 2.5W
Current Rating (Amps) 2A PNP 3.9A P-Channel
Subcategory Other Transistors
Voltage - Rated 35V PNP 20V P-Channel
Applications General Purpose
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)