Drain to Source Resistance 750mOhm
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 80 mJ
Drain to Source Breakdown Voltage 59V
Drain Current-Max (Abs) (ID) 1A
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 1A
Transistor Type NPN, N-Channel Gate-Drain, Source Clamp
Drain to Source Voltage (Vdss) 62V
Halogen Free Halogen Free
Transistor Application SWITCHING
Turn On Delay Time 1.2 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Base Part Number MLD1N06C
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 40W
Additional Feature LOGIC LEVEL COMPATIBLE
Applications General Purpose
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)