Feedback Cap-Max (Crss) 5 pF
DC Current Gain-Min (hFE) 60
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -50V
FET Technology METAL-OXIDE SEMICONDUCTOR
Collector Emitter Saturation Voltage -300mV
Drain-source On Resistance-Max 2Ohm
Drain Current-Max (Abs) (ID) 0.115A
Max Collector Current 200mA
Collector Emitter Voltage (VCEO) 50V
Transistor Type PNP Pre-Biased, N-Channel Pre-Biased
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 200mW
Current Rating (Amps) 200mA PNP 115mA N-Channel
Subcategory Other Transistors
Additional Feature BUILT IN BIAS RESISTOR
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)