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RoHS
RoHS RoHS compliant
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - JFETs
Description Tape & Box (TB) Through Hole N-Channel SINGLE JFET Transistor 5mA @ 15V 350mW 30V 100Ohm
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Technical Details

Compliance

RoHS Status ROHS3 Compliant

Technical

Resistance - RDS(On) 100Ohm
Voltage - Breakdown (V(BR)GSS) 30V
Voltage - Cutoff (VGS off) @ Id 500mV @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0) 5mA @ 15V
Feedback Cap-Max (Crss) 3.5 pF
FET Technology JUNCTION
DS Breakdown Voltage-Min 30V
Drain-source On Resistance-Max 100Ohm
Input Capacitance (Ciss) (Max) @ Vds 10pF @ 15V VGS
Transistor Application SWITCHING
FET Type N-Channel
Power - Max 350mW
Operating Mode DEPLETION MODE
Configuration SINGLE
Number of Elements 1
JESD-30 Code O-PBCY-T3
Terminal Position BOTTOM
HTS Code 8541.21.00.95
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tape & Box (TB)
Operating Temperature -65°C~150°C TJ

Physical

Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole

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