Voltage - Cutoff (VGS off) @ Id 500mV @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0) 2mA @ 15V
FET Technology METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) -15mA
Drain to Source Voltage (Vdss) 30V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Max Power Dissipation 225mW
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ