EC3A04B-3-TL-H
RoHS
/
Package 3-XFDFN
Category Discrete Semiconductor Products / Transistors - JFETs
Description
JFET N-CH 10MA 100MW ECSP1006-3
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Resistance - RDS(On) 200Ohm
Voltage - Cutoff (VGS off) @ Id 180mV @ 1μA
Current - Drain (Idss) @ Vds (Vgs=0) 1.2mA @ 10V
Drain to Source Resistance 200Ohm
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) -30V
Continuous Drain Current (ID) 10mA
Drain to Source Voltage (Vdss) 30V
Input Capacitance (Ciss) (Max) @ Vds 4pF @ 10V
FET Type N-Channel
Power Dissipation 100mW
Element Configuration Single
Max Power Dissipation 100mW
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2009
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Number of Pins 3
Package / Case 3-XFDFN
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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