2SK3666-2-TB-E
RoHS 
RoHS compliant
RoHS compliantPackage TO-236-3
Category Discrete Semiconductor Products / Transistors - JFETs
Description
JFET N-CH 10MA 200MW CP
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Buying Options
Total Price: USD $0.1
Unit Price: USD $0.0969
≥1 USD $0.0969
≥10 USD $0.0798
≥100 USD $0.07695
≥500 USD $0.07505
≥1000 USD $0.0722
≥10000 USD $0.0646
Inventory: 8002
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Dimensions
Width 1.5mm
Length 2.9mm
Height 1.1mm
Technical
Drain to Source Resistance 200Ohm
FET Technology JUNCTION
Input Capacitance 4pF
Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 0.01A
Gate to Source Voltage (Vgs) -30V
Continuous Drain Current (ID) 10mA
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 30V
Transistor Application AMPLIFIER
Power Dissipation 200mW
Operating Mode DEPLETION MODE
Element Configuration Single
Number of Elements 1
Pin Count 3
Terminal Form GULL WING
Terminal Position DUAL
Max Power Dissipation 200mW
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Terminal Finish Tin/Bismuth (Sn/Bi)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e6
Published 2005
Packaging Tape & Reel (TR)
Physical
Number of Pins 3
Surface Mount YES
Package / Case TO-236-3
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Factory Lead Time 6 Weeks
Alternative Model
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