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J110,126

NXP USA Inc.
RoHS
RoHS RoHS compliant
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - JFETs
Description Trans JFET N-CH 25V 10mA Si 3-Pin SPT Ammo
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Technical

Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 1996
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number J110
Power - Max 400mW
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 30pF @ 0V
Current - Drain (Idss) @ Vds (Vgs=0) 10mA @ 5V
Voltage - Cutoff (VGS off) @ Id 4V @ 1μA
Voltage - Breakdown (V(BR)GSS) 25V
Resistance - RDS(On) 18Ohm

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

SIA485DJ-T1-GE3

SIA485DJ-T1-GE3

Vishay Siliconix

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